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FQD1N80TM

FQD1N80TM

FQD1N80TM

onsemi

MOSFET N-CH 800V 1A DPAK

SOT-23

non-compliant

FQD1N80TM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.35313 -
5,000 $0.32878 -
12,500 $0.31660 -
25,000 $0.30996 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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