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IPB60R180P7ATMA1

IPB60R180P7ATMA1

IPB60R180P7ATMA1

MOSFET N-CH 600V 18A D2PAK

non-compliant

IPB60R180P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.29913 -
2,000 $1.20954 -
5,000 $1.16474 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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