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FDT1600N10ALZ

FDT1600N10ALZ

FDT1600N10ALZ

onsemi

MOSFET N-CH 100V 5.6A SOT223-4

non-compliant

FDT1600N10ALZ Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.24211 -
8,000 $0.22649 -
12,000 $0.21087 -
28,000 $0.19994 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.77 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 50 V
FET Feature -
Power Dissipation (Max) 10.42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
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