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PJD25N04_L2_00001

PJD25N04_L2_00001

PJD25N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

non-compliant

PJD25N04_L2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.47000 $0.47
500 $0.4653 $232.65
1000 $0.4606 $460.6
1500 $0.4559 $683.85
2000 $0.4512 $902.4
2500 $0.4465 $1116.25
0 items
Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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