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FDS86140

FDS86140

FDS86140

onsemi

MOSFET N-CH 100V 11.2A 8SOIC

non-compliant

FDS86140 Pricing & Ordering

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2,500 $0.90585 -
5,000 $0.87230 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2580 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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