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IPB60R060C7ATMA1

IPB60R060C7ATMA1

IPB60R060C7ATMA1

MOSFET N-CH 650V 35A TO263-3

non-compliant

IPB60R060C7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $4.43777 -
2,000 $4.27341 -
1 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 400 V
FET Feature -
Power Dissipation (Max) 162W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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