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FDS6692A

FDS6692A

FDS6692A

onsemi

MOSFET N-CH 30V 9A 8SOIC

compliant

FDS6692A Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.39918 -
5,000 $0.37312 -
12,500 $0.36009 -
25,000 $0.35298 -
770 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.47W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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