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FQT4N20LTF

FQT4N20LTF

FQT4N20LTF

onsemi

MOSFET N-CH 200V 850MA SOT223-4

non-compliant

FQT4N20LTF Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.23529 -
8,000 $0.22011 -
12,000 $0.20493 -
28,000 $0.19430 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
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