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BSP295L6327HTSA1

BSP295L6327HTSA1

BSP295L6327HTSA1

MOSFET N-CH 60V 1.8A SOT223-4

non-compliant

BSP295L6327HTSA1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 368 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA
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