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FDD8880

FDD8880

FDD8880

onsemi

MOSFET N-CH 30V 13A/58A TO252AA

non-compliant

FDD8880 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.30229 -
5,000 $0.28256 -
12,500 $0.27269 -
25,000 $0.26731 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 15 V
FET Feature -
Power Dissipation (Max) 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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