Welcome to ichome.com!

logo
Home

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Vishay Siliconix

MOSFET N-CH 600V 25A PPAK 8 X 8

non-compliant

SIHH26N60E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $2.94941 -
23 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2815 pF @ 100 V
FET Feature -
Power Dissipation (Max) 202W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

DMP1045U-7
DMN10H220LVT-7
DI015N25D1
IXFK140N20P
IXFK140N20P
$0 $/piece
3LP01C-TB-H
3LP01C-TB-H
$0 $/piece
G15P04K
G15P04K
$0 $/piece
IXFH340N075T2
IXFH340N075T2
$0 $/piece
DMN6040SSS-13
STP100N6F7

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.