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FDD3860

FDD3860

FDD3860

onsemi

MOSFET N-CH 100V 6.2A DPAK

compliant

FDD3860 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.56235 -
5,000 $0.53579 -
12,500 $0.51681 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1740 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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