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SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

Vishay Siliconix

MOSFET N-CH 100V 50A TO252AA

compliant

SQD50N10-8M9L_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.72072 -
6,000 $0.68468 -
10,000 $0.65894 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 25 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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