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FDC855N

FDC855N

FDC855N

onsemi

MOSFET N-CH 30V 6.1A SUPERSOT6

compliant

FDC855N Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.23563 -
6,000 $0.22043 -
15,000 $0.20523 -
30,000 $0.19459 -
6407 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 655 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
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