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IXTA3N110-TRL

IXTA3N110-TRL

IXTA3N110-TRL

IXYS

MOSFET N-CH 1100V 3A TO263

compliant

IXTA3N110-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.25604 $4.25604
500 $4.2134796 $2106.7398
1000 $4.1709192 $4170.9192
1500 $4.1283588 $6192.5382
2000 $4.0857984 $8171.5968
2500 $4.043238 $10108.095
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1100 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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