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SI2302DS,215

SI2302DS,215

SI2302DS,215

NXP USA Inc.

MOSFET N-CH 20V 2.5A TO236AB

compliant

SI2302DS,215 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.09000 $0.09
500 $0.0891 $44.55
1000 $0.0882 $88.2
1500 $0.0873 $130.95
2000 $0.0864 $172.8
2500 $0.0855 $213.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 10 V
FET Feature -
Power Dissipation (Max) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3
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