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SI2328DS-T1-GE3

SI2328DS-T1-GE3

SI2328DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 1.15A SOT23-3

non-compliant

SI2328DS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.29188 -
6,000 $0.27294 -
15,000 $0.26347 -
30,000 $0.25830 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 730mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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