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PSMN2R8-40BS,118

PSMN2R8-40BS,118

PSMN2R8-40BS,118

NXP USA Inc.

MOSFET N-CH 40V 100A D2PAK

non-compliant

PSMN2R8-40BS,118 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $0.97294 $778.352
1,600 $0.89288 -
2,400 $0.83130 -
5,600 $0.80051 -
6867 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4491 pF @ 20 V
FET Feature -
Power Dissipation (Max) 211W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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