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SI2399DS-T1-BE3

SI2399DS-T1-BE3

SI2399DS-T1-BE3

Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

non-compliant

SI2399DS-T1-BE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.53000 $0.53
500 $0.5247 $262.35
1000 $0.5194 $519.4
1500 $0.5141 $771.15
2000 $0.5088 $1017.6
2500 $0.5035 $1258.75
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 835 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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