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PSMN018-100ESFQ

PSMN018-100ESFQ

PSMN018-100ESFQ

NXP Semiconductors

NEXPERIA PSMN018 - NEXTPOWER 100

non-compliant

PSMN018-100ESFQ Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.54819 -
4976 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1482 pF @ 50 V
FET Feature -
Power Dissipation (Max) 111W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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