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PSMN018-100ESFQ

PSMN018-100ESFQ

PSMN018-100ESFQ

NXP Semiconductors

NEXPERIA PSMN018 - NEXTPOWER 100

SOT-23

non-compliant

PSMN018-100ESFQ Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.54819 -
4976 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1482 pF @ 50 V
FET Feature -
Power Dissipation (Max) 111W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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