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SI2343DS-T1-E3

SI2343DS-T1-E3

SI2343DS-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 3.1A SOT23-3

non-compliant

SI2343DS-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.23862 -
6,000 $0.22408 -
15,000 $0.20954 -
30,000 $0.19936 -
83010 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 53mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 15 V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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