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BUK6E2R0-30C127

BUK6E2R0-30C127

BUK6E2R0-30C127

NXP USA Inc.

N-CHANNEL POWER MOSFET

compliant

BUK6E2R0-30C127 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.84000 $0.84
500 $0.8316 $415.8
1000 $0.8232 $823.2
1500 $0.8148 $1222.2
2000 $0.8064 $1612.8
2500 $0.798 $1995
4728 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 229 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 14964 pF @ 25 V
FET Feature -
Power Dissipation (Max) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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