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DMT3009LFVW-7

DMT3009LFVW-7

DMT3009LFVW-7

Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333

compliant

DMT3009LFVW-7 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.27248 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3.8V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 823 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN
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