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PSMN4R1-60YLX

PSMN4R1-60YLX

PSMN4R1-60YLX

Nexperia USA Inc.

MOSFET N-CH 60V 100A LFPAK56

compliant

PSMN4R1-60YLX Pricing & Ordering

Quantity Unit Price Ext. Price
1,500 $0.57701 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7853 pF @ 25 V
FET Feature -
Power Dissipation (Max) 238W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
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