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IXTB30N100L

IXTB30N100L

IXTB30N100L

IXYS

MOSFET N-CH 1000V 30A PLUS264

compliant

IXTB30N100L Pricing & Ordering

Quantity Unit Price Ext. Price
25 $43.07200 $1076.8
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 545 nC @ 20 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 800W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
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