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IXTB30N100L

IXTB30N100L

IXTB30N100L

IXYS

MOSFET N-CH 1000V 30A PLUS264

compliant

IXTB30N100L Pricing & Ordering

Quantity Unit Price Ext. Price
25 $43.07200 $1076.8
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 545 nC @ 20 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 800W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
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