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PSMN102-200Y,115

PSMN102-200Y,115

PSMN102-200Y,115

Nexperia USA Inc.

MOSFET N-CH 200V 21.5A LFPAK56

compliant

PSMN102-200Y,115 Pricing & Ordering

Quantity Unit Price Ext. Price
1,500 $0.64301 -
3,000 $0.60014 -
7,500 $0.57013 -
10,500 $0.54870 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1568 pF @ 30 V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
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