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PSMN102-200Y,115

PSMN102-200Y,115

PSMN102-200Y,115

Nexperia USA Inc.

MOSFET N-CH 200V 21.5A LFPAK56

compliant

PSMN102-200Y,115 Pricing & Ordering

Quantity Unit Price Ext. Price
1,500 $0.64301 -
3,000 $0.60014 -
7,500 $0.57013 -
10,500 $0.54870 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1568 pF @ 30 V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
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