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IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

IXYS

MOSFET N-CH 1200V 1.4A TO263

compliant

IXTA1R4N120P-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.65894 $3.65894
500 $3.6223506 $1811.1753
1000 $3.5857612 $3585.7612
1500 $3.5491718 $5323.7577
2000 $3.5125824 $7025.1648
2500 $3.475993 $8689.9825
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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