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IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

IXYS

MOSFET N-CH 1200V 1.4A TO263

SOT-23

non-compliant

IXTA1R4N120P-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.65894 $3.65894
500 $3.6223506 $1811.1753
1000 $3.5857612 $3585.7612
1500 $3.5491718 $5323.7577
2000 $3.5125824 $7025.1648
2500 $3.475993 $8689.9825
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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