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PMPB215ENEAX

PMPB215ENEAX

PMPB215ENEAX

Nexperia USA Inc.

MOSFET N-CH 80V 1.9A DFN2020MD-6

non-compliant

PMPB215ENEAX Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16809 -
6,000 $0.15914 -
15,000 $0.15018 -
30,000 $0.13944 -
75,000 $0.13496 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 40 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
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