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IPD60R950C6ATMA1

IPD60R950C6ATMA1

IPD60R950C6ATMA1

MOSFET N-CH 600V 4.4A TO252-3

non-compliant

IPD60R950C6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.53994 -
5,000 $0.51590 -
12,500 $0.49874 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
FET Feature -
Power Dissipation (Max) 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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