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PMPB10XNE,115

PMPB10XNE,115

PMPB10XNE,115

Nexperia USA Inc.

MOSFET N-CH 20V 9A DFN2020MD-6

non-compliant

PMPB10XNE,115 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2175 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
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