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IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

MOSFET N-CH 80V 200A HSOG-8

non-compliant

IAUS200N08S5N023ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.79000 $5.79
500 $5.7321 $2866.05
1000 $5.6742 $5674.2
1500 $5.6163 $8424.45
2000 $5.5584 $11116.8
2500 $5.5005 $13751.25
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing
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