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| Name | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 36A |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 308nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V |
| Power - Max | 694W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
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