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NTMFD0D9N02P1E

NTMFD0D9N02P1E

NTMFD0D9N02P1E

onsemi

IFET 25V 0.9 MOHM PQFN56MP

non-compliant

NTMFD0D9N02P1E Pricing & Ordering

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Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V, 25V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 30A (Ta)
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Vgs(th) (Max) @ Id 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V, 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 15V, 5050pF @ 13V
Power - Max 960mW (Ta), 1.04W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PQFN (5x6)
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