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Name | Value |
---|---|
Product Status | Active |
FET Type | 2 N-Channel (Dual) Common Source |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 689A (Tc) |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 240A, 20V |
Vgs(th) (Max) @ Id | 2.4V @ 24mA |
Gate Charge (Qg) (Max) @ Vgs | 1290nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 27000pF @ 700V |
Power - Max | 1882W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | - |
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