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DMT3011LDT-7

DMT3011LDT-7

DMT3011LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 8A V-DFN3030-8

compliant

DMT3011LDT-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.40388 -
6,000 $0.37913 -
15,000 $0.36675 -
30,000 $0.36000 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A, 10.7A
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 641pF @ 15V
Power - Max 1.9W
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Supplier Device Package V-DFN3030-8 (Type K)
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