Welcome to ichome.com!
| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 15A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 838 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 (ISOTOP®) |
| Package / Case | SOT-227-4, miniBLOC |
Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.