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IRF621R

IRF621R

IRF621R

Harris Corporation

N-CHANNEL POWER MOSFET

non-compliant

IRF621R Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.40000 $0.4
500 $0.396 $198
1000 $0.392 $392
1500 $0.388 $582
2000 $0.384 $768
2500 $0.38 $950
6837 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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