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LND150N3-G-P003

LND150N3-G-P003

LND150N3-G-P003

MOSFET N-CH 500V 30MA TO92-3

non-compliant

LND150N3-G-P003 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.70000 $0.7
500 $0.693 $346.5
1000 $0.686 $686
1500 $0.679 $1018.5
2000 $0.672 $1344
2500 $0.665 $1662.5
0 items
Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 740mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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