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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 200A, 20V |
| Vgs(th) (Max) @ Id | 2.2V @ 10mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 490nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 1000V |
| Power - Max | 1100W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | D-3 Module |
| Supplier Device Package | D3 |
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