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NDS8852H

NDS8852H

NDS8852H

onsemi

MOSFET N/P-CH 30V 8SOIC

compliant

NDS8852H Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.3A, 3.4A
Rds On (Max) @ Id, Vgs 80mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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