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APTM100H35FT3G

APTM100H35FT3G

APTM100H35FT3G

MOSFET 4N-CH 1000V 22A SP3

compliant

APTM100H35FT3G Pricing & Ordering

Quantity Unit Price Ext. Price
100 $100.07640 $10007.64
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 22A
Rds On (Max) @ Id, Vgs 420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V
Power - Max 390W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP3
Supplier Device Package SP3
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