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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | 4 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 46A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5590pF @ 25V |
| Power - Max | 357W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
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