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IPD640N06LGBTMA1

IPD640N06LGBTMA1

IPD640N06LGBTMA1

MOSFET N-CH 60V 18A TO252-3

compliant

IPD640N06LGBTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.35460 $0.3546
500 $0.351054 $175.527
1000 $0.347508 $347.508
1500 $0.343962 $515.943
2000 $0.340416 $680.832
2500 $0.33687 $842.175
0 items
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Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 30 V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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