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IXTQ200N10T

IXTQ200N10T

IXTQ200N10T

IXYS

MOSFET N-CH 100V 200A TO3P

compliant

IXTQ200N10T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.63000 $5.63
30 $4.52267 $135.6801
120 $4.12050 $494.46
510 $3.33661 $1701.6711
1,020 $2.81400 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
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