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SIHP35N60E-GE3

SIHP35N60E-GE3

SIHP35N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A TO220AB

non-compliant

SIHP35N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.70000 $6.7
10 $5.98400 $59.84
100 $4.90690 $490.69
500 $3.97338 $1986.69
1,000 $3.35104 -
3,000 $3.18349 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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