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IXTP4N70X2M

IXTP4N70X2M

IXTP4N70X2M

IXYS

MOSFET N-CH 700V 4A TO220

SOT-23

non-compliant

IXTP4N70X2M Pricing & Ordering

Quantity Unit Price Ext. Price
50 $2.00000 $100
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 386 pF @ 25 V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
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