Welcome to ichome.com!

logo
Home

IXTP1R4N120P

IXTP1R4N120P

IXTP1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO220AB

compliant

IXTP1R4N120P Pricing & Ordering

Quantity Unit Price Ext. Price
50 $3.06000 $153
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SQR70090ELR_GE3
IXFP180N10T2
IXFP180N10T2
$0 $/piece
SQ2319ADS-T1_BE3
SIA456DJ-T1-GE3
IRF820LPBF
IRF820LPBF
$0 $/piece
SUM90140E-GE3
NTE455
NTE455
$0 $/piece
STB22N60M6
FQP6N25

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.