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SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 200V 2.6A PPAK SC70

non-compliant

SIA456DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.41580 -
6,000 $0.39501 -
15,000 $0.38016 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 100 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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