Welcome to ichome.com!

logo
Home

SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 200V 2.6A PPAK SC70

compliant

SIA456DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.41580 -
6,000 $0.39501 -
15,000 $0.38016 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 100 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IRF820LPBF
IRF820LPBF
$0 $/piece
SUM90140E-GE3
NTE455
NTE455
$0 $/piece
STB22N60M6
FQP6N25
FDB9403-F085
FDB9403-F085
$0 $/piece
NX138AKR
NX138AKR
$0 $/piece
DMP2018LFK-7

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.