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IXTP02N120P

IXTP02N120P

IXTP02N120P

IXYS

MOSFET N-CH 1200V 200MA TO220AB

non-compliant

IXTP02N120P Pricing & Ordering

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50 $1.50000 $75
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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