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Name | Value |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 370µA |
Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
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